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savantic semiconductor product specification silicon npn power transistors 2SC2337 description with to-3 package complement to type 2sa1007 wide area of safe operation applications for audio frequency power amplifier applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 130 v v ebo emitter-base voltage open collector 5 v i c collector current 10 a p c collector power dissipation t c =25 100 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC2337 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ;i b =0 130 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 5 v v cesat collector-emitter saturation voltage i c =5a; i b =0.5a 2.5 v v be base-emitter on voltage i c =1a ; v ce =5v 1.5 v i cbo collector cut-off current v cb =150v; i e =0 50 a i ebo emitter cut-off current v eb =5v; i c =0 50 a h fe-1 dc current gain i c =2a ; v ce =5v 40 320 h fe-2 dc current gain i c =5a ; v ce =5v 20 c ob collector output capacitance i e =0; v cb =10v;f=1mhz 150 pf f t transition frequency i c =1a ; v ce =10v 70 mhz
savantic semiconductor product specification 3 silicon npn power transistors 2SC2337 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm)

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